The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jan. 12, 2024
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Gen Tamamushi, Kurokawa-gun, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H05H 1/00 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32146 (2013.01); H01J 37/32128 (2013.01); H01J 37/32165 (2013.01); H01J 37/32183 (2013.01); H01J 2237/327 (2013.01); H01J 2237/334 (2013.01);
Abstract
A plasma processing method according to the present disclosure includes disposing a substrate on a substrate support, supplying, into a chamber, a processing gas for processing the substrate, generating, in the chamber, a plasma from the processing gas by using a first RF signal and a second RF signal, and applying a bias signal to the substrate support, and generating the plasma includes superimposing the second RF signal on the first RF signal based on a timing when the bias signal is applied to the substrate support.