Memory device, memory system, memory controller and operating method thereof

Abstract

Examples of the present disclosure disclose a memory device, a memory system, a memory controller and an operating method, the memory device includes: a preset number of the memory cells form one code word, and the multiple storage bits correspond to multiple pages respectively; at least one page corresponds to multiple stages, the multiple stages include a first stage and a second stage, and the read voltage corresponding to the second stage is less than the read voltage in the first stage; peripheral circuit coupled to the array of memory cells and configured to: obtain the target valley voltage in the first target stage; take the target valley voltage as a read voltage at which a read operation is performed on the at least one code word; and obtain the predicted valley voltage in the second target stage in accordance with the target valley voltage in the first target stage.