The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

May. 10, 2024
Applicant:

Stmicroelectronics International N.v., Geneva, CH;

Inventors:

Xavier Lecoq, Voiron, FR;

Alin Razafindraibe, Saint Martin d'Heres, FR;

Christophe Forel, Saint-Egreve, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0004 (2013.01); G11C 13/0064 (2013.01); G11C 2013/0054 (2013.01);
Abstract

A phase-change memory cell to be read is associated with a phase-change reference memory cell placed in a SET state. The reference memory cell has a structure that is identical to that of the memory cell. A first voltage is applied to the memory cell to cause output of a first current. A second voltage is applied to the reference memory cell to cause output of a second current. A sense amplifier is coupled to the memory cell and to the reference memory cell and is configured to compare respective values of the first current and of the second current and generate output information representative of the logic value of the datum stored by the memory cell.


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