The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Aug. 30, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Glen E. Hush, Boise, ID (US);

Sean S. Eilert, Penryn, CA (US);

Aliasger T. Zaidy, Seattle, WA (US);

Kunal R. Parekh, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); G06F 3/06 (2006.01); G06F 13/16 (2006.01); G06F 13/28 (2006.01); G11C 7/08 (2006.01); G11C 7/10 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01); G11C 11/4093 (2006.01); G11C 11/4096 (2006.01); G16B 30/00 (2019.01); G16B 50/10 (2019.01); H10P 54/00 (2026.01); H10P 74/20 (2026.01); H10W 72/50 (2026.01); H10W 72/90 (2026.01); H10W 90/00 (2026.01); H10W 99/00 (2026.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01); H10W 80/00 (2026.01); H10W 90/20 (2026.01); H10W 90/26 (2026.01);
U.S. Cl.
CPC ...
G11C 11/4093 (2013.01); G06F 3/0656 (2013.01); G06F 13/1673 (2013.01); G06F 13/28 (2013.01); G11C 7/08 (2013.01); G11C 7/1039 (2013.01); G11C 11/4087 (2013.01); G11C 11/4091 (2013.01); G11C 11/4096 (2013.01); G16B 30/00 (2019.02); G16B 50/10 (2019.02); H10P 54/00 (2026.01); H10P 74/203 (2026.01); H10W 72/50 (2026.01); H10W 72/90 (2026.01); H10W 90/00 (2026.01); H10W 99/00 (2026.01); G06F 2213/28 (2013.01); H10W 72/01 (2026.01); H10W 72/07252 (2026.01); H10W 72/20 (2026.01); H10W 72/221 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 80/721 (2026.01); H10W 90/20 (2026.01); H10W 90/26 (2026.01); H10W 90/288 (2026.01); H10W 90/297 (2026.01); H10W 90/721 (2026.01); H10W 90/724 (2026.01); H10W 90/751 (2026.01); H10W 90/752 (2026.01); H10W 90/792 (2026.01);
Abstract

A memory device includes an array of memory cells configured on a die or chip and coupled to sense lines and access lines of the die or chip and a respective sense amplifier configured on the die or chip coupled to each of the sense lines. Each of a plurality of subsets of the sense lines is coupled to a respective local input/output (I/O) line on the die or chip for communication of data on the die or chip and a respective transceiver associated with the respective local I/O line, the respective transceiver configured to enable communication of the data to one or more device off the die or chip.


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