The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Jan. 22, 2024
Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

National Tsing Hua University, Hsinchu City, TW;

Inventors:

Jui-Jen Wu, Hsinchu, TW;

Ping-Chun Wu, Hsinchu, TW;

Win-San Khwa, Taipei City, TW;

Meng-Fan Chang, Taichung City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/406 (2006.01); G11C 11/4093 (2006.01); G11C 11/4094 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40615 (2013.01); G11C 11/4093 (2013.01); G11C 11/4094 (2013.01); G11C 11/4096 (2013.01);
Abstract

In this disclosure, a storage circuit is provided. The storage circuit includes a gain-cell, a self-refresh unit, and a latch circuit. The gain-cell is configured to store first data in a gate of a storage transistor. The self-refresh unit is configured to read the first data from the gain-cell and write the first data back to the gain-cell. The latch circuit is configured to read the first data from the self-refresh unit and latch the first data.


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