The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Nov. 09, 2023
Applicant:

Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Wuhan, CN;

Inventors:

Bin Yuan, Wuhan, CN;

Xingyu Zhou, Wuhan, CN;

Cheng Chen, Wuhan, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 19/00 (2006.01); G09G 3/20 (2006.01); G11C 19/28 (2006.01);
U.S. Cl.
CPC ...
G09G 3/20 (2013.01); G11C 19/287 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0852 (2013.01); G09G 2310/0267 (2013.01); G09G 2310/0286 (2013.01); G09G 2310/08 (2013.01); G09G 2330/021 (2013.01);
Abstract

The present disclosure discloses a gate drive circuit and a display panel. The gate drive circuit includes a plurality of shift registers. Each shift register includes a level transmission signal selection module, a pull-up control module, a pulse quantity reduction module, a first inverting module, a first output module, a second output module, and a voltage boosting module. By connecting the voltage boosting module between a second electrode of a second transistor and a low potential line in series, when a first transistor is turned on, a potential of the second electrode of the second transistor can be increased, and on-state current of the second transistor can be reduced, so that a pulse amplitude of a second gate drive signal can be increased and stabilized.


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