Non-destructive inspection method including inspecting multiple observation sites and method of manufacturing semiconductor memory device using the same

Abstract

An inspection method is provided. The inspection method includes inspecting a plurality of first observation sites by detecting ultrasonic signals emitted from the plurality of first observation sites, inspecting a plurality of second observation sites by detecting ultrasonic signals emitted from the plurality of second observation sites; and inspecting a target structure by detecting an ultrasonic signal emitted from the target structure, where the target structure includes a structure of interest, and wherein the plurality of first observation sites are intermediate results of forming the target structure, respectively, and the plurality of second observation sites are structures modified from the target structure.