The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Nov. 22, 2024
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Evrim Solmaz, Austin, TX (US);

Melvin Verbaas, Austin, TX (US);

Jianping Zhao, Austin, TX (US);

Barton Lane, Austin, TX (US);

Du Zhang, Albany, NY (US);

Toru Hisamatsu, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 16/505 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45542 (2013.01); C23C 16/4408 (2013.01); C23C 16/45553 (2013.01); C23C 16/505 (2013.01);
Abstract

A method for a cyclic deposition process includes loading a substrate into a plasma processing chamber; generating source power pulses having a pulse frequency that varies from a first frequency to a different second frequency; and performing the cyclic deposition process to deposit a plurality of layers. One cycle of the cyclic deposition process deposits one layer of the plurality of layers and includes flowing a process gas into the plasma processing chamber; powering a source electrode of the plasma processing chamber with the source power pulses to generate a plasma; and, while varying the pulse frequency applied to the source electrode from the first frequency to the second frequency, exposing the substrate to the plasma to deposit one layer of the plurality of layers onto the substrate.


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