The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Dec. 16, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dongjoo Choi, Suwon-si, KR;

Gunho Chang, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/283 (2006.01); H01L 23/52 (2006.01); H10W 42/00 (2026.01); H10W 72/00 (2026.01); H10W 72/90 (2026.01); H10W 80/00 (2026.01);
U.S. Cl.
CPC ...
H10W 72/019 (2026.01); H10W 42/00 (2026.01); H10W 72/921 (2026.01); H10W 72/923 (2026.01); H10W 72/942 (2026.01); H10W 80/102 (2026.01);
Abstract

Disclosed is a semiconductor device comprising an upper pad surrounded by an upper dielectric layer, a lower pad in contact with the upper pad and the upper dielectric layer surrounded by a lower dielectric layer. The upper pad, the upper dielectric layer, the lower pad, and the lower dielectric layer define an upper space surrounding a lower portion of the upper pad and a lower space surrounding an upper portion of the lower pad. The upper space includes a first pad overlap section overlapping the lower pad and a first dielectric layer overlap section overlapping the lower dielectric layer. The lower pad includes a first protrusion part protruding toward the first pad overlap section of the upper space. The first protrusion part of the lower pad is at a level higher than that of a bottom surface of the upper dielectric layer.


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Choi, Dongjoo. (2026). Semiconductor device (U.S. Patent No. 12708016). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12708016

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