The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Apr. 12, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Kunal R. Parekh, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 25/00 (2006.01); H10W 40/22 (2026.01); H10W 40/25 (2026.01); H10W 72/00 (2026.01); H10W 80/00 (2026.01); H10W 90/00 (2026.01); H10W 90/20 (2026.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H10W 40/253 (2026.01); H10W 40/22 (2026.01); H10W 90/00 (2026.01); H10W 72/823 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 90/288 (2026.01); H10W 90/291 (2026.01); H10W 90/792 (2026.01);
Abstract
A semiconductor device assembly is provided. The assembly includes a first semiconductor device including a plurality of electrical contacts on an upper surface thereof; a monolithic silicon structure having a lower surface in contact with the upper surface of the first semiconductor device, the monolithic silicon structure including a cavity extending from the lower surface into a body of the monolithic silicon structure; and a second semiconductor device disposed in the cavity and including a plurality of interconnects, each operatively coupled to a corresponding one of the plurality of electrical contacts.