The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Jan. 18, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Lien Huang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a cap layer for sealing an air gap is provided. The method includes forming a line feature over a substrate, forming a contact etch stop layer (CESL) on a sidewall of the line feature, forming a sacrificial layer on a sidewall of the CESL, forming a liner layer on a sidewall of the sacrificial layer, removing the sacrificial layer to form an air gap which is bordered at the CESL and the liner layer and which is adjacent to the line feature, etching back upper ends of the CESL and the liner layer to widen an opening of the air gap, and forming a cap layer to seal the opening of the air gap thus widened.