The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Aug. 24, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ping-Wei Wang, Hsin-Chu, TW;
Jui-Lin Chen, Taipei City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a first source/drain (S/D) epitaxial feature, a second S/D epitaxial feature adjacent to the first S/D epitaxial feature, an insulating structure between the first and the second S/D epitaxial features, and a shared S/D contact over top surfaces of the first and the second S/D epitaxial features. A center portion of the shared S/D contact is directly between a side surface of the first S/D epitaxial feature and a side surface of the second S/D epitaxial feature. The center portion is directly above the insulating structure. The semiconductor structure further includes a backside via penetrating through the insulating structure to directly land on a bottom surface of the center portion.