The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

May. 27, 2021
Applicant:

Showa Denko K.k., Tokyo, JP;

Inventor:

Kazuma Matsui, Tokyo, JP;

Assignee:

Resonac Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 50/28 (2026.01); H10P 50/00 (2026.01); H10P 50/24 (2026.01); C09K 13/00 (2006.01);
U.S. Cl.
CPC ...
H10P 50/283 (2026.01); H10P 50/73 (2026.01); C09K 13/00 (2013.01); H10P 50/242 (2026.01);
Abstract

An etching method including an etching step of bringing, in the presence of plasma, an etching gas containing a fluorine compound with three or fewer carbon atoms having at least one bond of a carbon-oxygen double bond and an ether bond in a molecule into contact with a target etching member having an etching target and a non-etching target, and selectively etching the etching target in comparison with the non-etching target. A concentration of the fluorine compound in the etching gas is 0.5 vol % or more to 40 vol % or less, and the etching target has silicon nitride.


Find Patent Forward Citations

Matsui, Kazuma. (2026). Etching method and semiconductor element manufacturing method (U.S. Patent No. 12707908). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12707908

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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