The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

May. 08, 2024
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventors:

Chia-Ching Hsu, Yunlin County, TW;

Wang Xiang, Singapore, SG;

Shen-De Wang, Hsinchu County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H10B 63/845 (2023.02); H10N 70/021 (2023.02); H10N 70/066 (2023.02); H10N 70/8833 (2023.02);
Abstract

A RRAM (resistive random-access memory) device includes a bottom electrode line directly on a first metal structure, a top electrode island disposed beside the bottom electrode line, a resistive material sandwiched by a sidewall of the bottom electrode line and a sidewall of the top electrode island, and a cap layer covering a portion of the first metal structure and under the bottom electrode line.


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