The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Jan. 19, 2023
Skyworks Solutions, Inc., Irvine, CA (US);
Hailing Wang, Acton, MA (US);
Guillaume Alexandre Blin, Carlisle, MA (US);
David Scott Whitefield, Andover, MA (US);
Paul T. Dicarlo, Marlborough, MA (US);
SKYWORKS SOLUTIONS, INC., Irvine, CA (US);
Abstract
Silicon-on-insulator (SOI) substrate processing for transistor enhancement is disclosed. In certain embodiments, a silicon substrate for an SOI process is separated into sub-regions or islands by dielectric. Thus, the substrate is changed from having one region and one shared contact into multiple substrate sub-regions with independent contacts. Since the substrate serves as a back gate to SOI transistors formed in an active silicon layer, breaking the substrate into independent or separate islands leads to a drop in the impact of each island on the drain-to-source voltage and/or gate-to-source voltage of the SOI transistors. Accordingly, reduced harmonics and improved linearity are achieved.