The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Jun. 01, 2023
United Microelectronics Corp., Hsinchu, TW;
Kai-Kuen Chang, Hsinchu City, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate and a first switch element disposed in a first device area of the substrate. The first switch element includes a channel region, a first gate dielectric layer, a first gate layer and a source/drain region. The channel region is disposed at the bottom of a recess in the first device area. The first gate dielectric layer has a first region and a second region extending into the recess, the first region has a first thickness; the second region has a second thickness, and the first thickness is smaller than the second thickness. The first gate layer is disposed above the first gate dielectric layer. The source/drain region is disposed in the substrate and adjacent to the first gate dielectric layer.