The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Aug. 31, 2022
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Tatsuya Nishiwaki, Yokohama, JP;

Ryohei Gejo, Kawasaki, JP;

Tomoko Matsudai, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 8/60 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 62/60 (2025.01); H10P 54/00 (2026.01);
U.S. Cl.
CPC ...
H10D 64/021 (2025.01); H10D 8/60 (2025.01); H10D 62/126 (2025.01); H10D 62/393 (2025.01); H10D 62/60 (2025.01); H10P 54/00 (2026.01);
Abstract

A semiconductor device includes a first electrode, a plurality of unit element regions, and a partitioning region. Each of the unit element regions includes a first semiconductor part, a second electrode, and a first conductive part. The first semiconductor part includes first to third semiconductor regions. The first semiconductor region is located above the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The second electrode is located on the second and third semiconductor regions. The first conductive part faces the second semiconductor region via a first insulating film. At least a portion of the plurality of unit element regions includes a common pattern. The partitioning region includes a second semiconductor part and partitions the plurality of unit element regions. The second semiconductor part is continuous with the first semiconductor part.


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