The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Aug. 03, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jhon Jhy Liaw, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes doping a substrate to form a first well region and a second well region having a different conductivity type than the first well region; forming a first fin structure upwardly extending above the first well region and a second fin structure upwardly extending above the second well region; forming a first gate electrode surrounding the first fin structure and a second gate electrode surrounding the second fin structure; forming first source/drain regions adjoining the first fin structure and on opposite sides of the first gate electrode and second source/drain regions adjoining the second fin structure on opposite sides of the second gate electrode; forming an isolation line interposing the first and second gate electrodes and laterally between a first one of the first source/drain regions and a first one of the second source/drain regions.