The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Feb. 07, 2024
Nexperia B.v., Nijmegen, NL;
Massimo Cataldo Mazzillo, Hamburg, DE;
Georgio El-Zammar, Hamburg, DE;
Sönke Habenicht, Hamburg, DE;
NEXPERIA B.V., Nijmegen, NL;
Abstract
A semiconductor device is provided including: an epitaxial layer doped with a first type of charge carrier; at least one junction termination extension (JTE), embedded in the epitaxial layer so that an upper surface of the JTE is flush with an upper surface of the epitaxial layer, the JTE is doped with a second type of charge carrier different from the first type and at a higher doping concentration than the concentration of the epitaxial layer; a passivation layer containing a sufficient quantity of the second type of charge carrier disposed on a part of an upper surface of the JTE, so that the passivation layer is arranged to induce a surface charge density greater than 5E11 cmof the second type of charge on the part of the upper surface of the JTE, by depleting an interior area of the JTE of free charge carriers of the second type.