The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Jan. 12, 2023
Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

National Yang Ming Chiao Tung University, Hsinchu City, TW;

Inventors:

Hsin-Cheng Lin, Taipei City, TW;

Tao Chou, New Taipei City, TW;

Chee-Wee Liu, Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01); H10W 20/40 (2026.01);
U.S. Cl.
CPC ...
H10D 1/042 (2025.01); H10D 1/714 (2025.01); H10D 1/716 (2025.01); H10W 20/496 (2026.01);
Abstract

A method includes forming a sacrificial multi-layer stack including first, second, and third sacrificial layers stacked in a vertical direction on a substrate; removing the first sacrificial layer to form a first space; depositing a first dielectric layer and a first electrode material in the first space; removing the second sacrificial layer to form a second space; depositing a second dielectric layer and a second electrode material in the second space; removing the third sacrificial layer to form a third space; depositing a third dielectric layer and a third electrode material in the third space.


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