The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Nov. 15, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A hybrid memory device includes a first transistor including a first channel region, a first gate electrode facing and spaced apart from the first channel region, and a first memory layer arranged between the first channel region and the first gate electrode, and a second transistor including a second channel region including a same material as the first channel region, a second gate electrode facing and spaced apart from the second channel region, and a second memory layer arranged between the second channel region and the second gate electrode, wherein the hybrid memory device is used as a highly integrated memory system by two transistors that are formed on a same substrate and operate as different types of memories.