Array of capacitors, an array of memory cells, method used in forming an array of memory cells, and method used in forming an array of capacitors

Abstract

A method used in forming an array of capacitors comprises forming first walls along a column direction and second walls along a row direction. The first and second walls individually comprise a first material directly above a second material. The first and second materials are of different compositions relative one another. All of the second material is removed from being directly under the first material in the second walls to form beams that are elongated along the row direction and are suspended between immediately-adjacent of the first walls and to leave the second material directly under the first material in the first walls. Third walls are formed along the row direction. The third walls comprise third material that is of different composition from those of the first and second materials. The third material of individual of the third walls circumferentially-covers the beams. Conductive material is grown over the first and second materials selectively relative to the third material. The selectively-grown conductive material is vertically-along sidewalls of the first walls and comprising first capacitor electrodes. The third walls are removed after the selectively growing. After removing the third walls, a capacitor insulator is formed over the first capacitor electrodes and that circumferentially-covers the beams. Second capacitor electrodes are formed over the capacitor insulator to form a plurality of capacitors that individually comprise one of the first capacitor electrodes, the capacitor insulator, and one of the second capacitor electrodes. The second capacitor electrodes are common to multiple of the capacitors. Other embodiments, including structure, are disclosed.