The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Jun. 05, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jinseong Heo, Suwon-si, KR;
Taehwan Moon, Suwon-si, KR;
Seunggeol Nam, Suwon-si, KR;
Hyunjae Lee, Suwon-si, KR;
Dukhyun Choe, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A memory device includes a plurality of gate electrodes spaced apart from each other in a first direction, a memory layer comprising a plurality of memory regions that protrude and extend in a second direction perpendicular to the first direction to face the plurality of gate electrodes, respectively, a plurality of first insulating layers extended to spaces between the plurality of memory regions between the plurality of gate electrodes, a channel layer disposed between the memory layer and the plurality of gate electrodes, the channel layer having a shape including a plurality of first regions surrounding the plurality of memory regions and a second region that connects the plurality of first regions to each other in the first direction, and a gate insulating layer arranged between the channel layer and the plurality of gate electrodes.