The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Apr. 03, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Jenn-Gwo Hwu, Taipei City, TW;
Sung-Wei Huang, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A method includes forming a metal-insulator-semiconductor (MIS) structure, in which the MIS structure includes a semiconductor layer, an insulating layer over the semiconductor layer, and a metal electrode layer over the insulating layer; performing a soft breakdown process to the MIS structure to form a local breakdown portion in the insulating layer; performing a first write operation by supplying a first voltage pulse; performing a first read operation by supplying a second voltage pulse and detecting a first read current flowing through the MIS structure; performing a second write operation by supplying a third voltage pulse, in which the first voltage pulse has a higher voltage level than the third voltage pulse; and performing a second read operation by supplying a fourth voltage pulse and detecting a second read current flowing through the MIS structure, in which the first read current is different from the second read current.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile