The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Jan. 20, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Gerben Doornbos, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A static random access memory and a manufacturing method thereof are provided. The static random access memory includes a first complementary field effect transistor (CFET), a second CFET, a first pass fate transistor and a second pass gate transistor. The first CFET and the second CFET are disposed in a first tier. The first pass gate transistor is connected to the first CFET through a first path. The second pass gate transistor is connected to the second CFET through a second path. The first pass gate transistor and the second pass gate transistor are disposed in a second tier.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile