The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Aug. 01, 2024
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Leonid Dorf, San Jose, CA (US);
Evgeny Kamenetskiy, Santa Clara, CA (US);
James Rogers, Los Gatos, CA (US);
Olivier Luere, Sunnyvale, CA (US);
Rajinder Dhindsa, Pleasanton, CA (US);
Viacheslav Plotnikov, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H10P 50/28 (2026.01); H10P 72/72 (2026.01);
U.S. Cl.
CPC ...
H01J 37/32128 (2013.01); H01J 37/32082 (2013.01); H01J 37/32146 (2013.01); H01J 37/32165 (2013.01); H01J 37/32174 (2013.01); H01J 37/3299 (2013.01); H10P 50/283 (2026.01); H01J 2237/3341 (2013.01); H10P 72/72 (2026.01);
Abstract
Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.