The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Jul. 01, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Fanya Bi, Wuhan, CN;

Xing Wang, Wuhan, CN;

Hua Tan, Wuhan, CN;

Zhe Sun, Wuhan, CN;

Bo Yu, Wuhan, CN;

Guangyao Han, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 16/08 (2013.01); G11C 16/32 (2013.01);
Abstract

Systems, devices, methods, and storage media for managing refreshment of memory cells in memory systems are provided. In one aspect, a memory system includes: a non-volatile memory device including a plurality of memory cells and a memory controller coupled to the non-volatile memory device. The memory controller is configured to: refresh adjacent memory cells of a target memory cell of the plurality of memory cells, when a count of write operations performed on the target memory cell within a preset time duration is greater than a preset threshold.


Find Patent Forward Citations

Bi, Fanya. (2026). Managing refreshment of memory cells in memory systems (U.S. Patent No. 12706161). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12706161

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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