The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

May. 06, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Riccardo Pazzocco, Verona, IT;

Angelo Visconti, Appiano Gentile, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4096 (2006.01); G11C 11/4076 (2006.01); G11C 11/408 (2006.01); G11C 11/4093 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01); G11C 11/4076 (2013.01); G11C 11/4087 (2013.01); G11C 11/4093 (2013.01);
Abstract

Methods, systems, and devices for managing memory based on access duration are described. A memory device may include a first set of memory cells resilient against access durations of a first duration and a second set of memory cells resilient against access durations of a shorter duration. A command for accessing the memory device may be received. The command may be associated with an access duration. Whether to access, as part of executing the command, the first set of memory cells or the second set of memory cells may be determined based on the access duration. The first set of memory cells may be accessed, as part of executing the command, based on the access duration being greater than a threshold duration. Or the second set of memory cells may be accessed based on the access duration being less than or equal to the threshold duration.


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