The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Aug. 21, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Augusto Benvenuti, Lallio, IT;

Giovanni Maria Paolucci, Milan, IT;

Alessio Urbani, Rome, IT;

Gianpietro Carnevale, Bottanuco, IT;

Aurelio Giancarlo Mauri, Meda, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01);
Abstract

A memory access operation is initiated to read a set of target memory cells of a target wordline of the memory device. During the memory access operation, a read voltage level is caused to be applied to the target wordline. During the memory access operation, a first pass through voltage level is caused to be applied to a first wordline adjacent to the target wordline. During the memory access operation, a second pass through voltage is caused to be applied to a second wordline adjacent to the target wordline, wherein the first pass through voltage level is less than the second pass through voltage level.


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