The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Mar. 01, 2022
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Ricardo Ascazubi, Hillsboro, OR (US);
Georgia Modoran, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2875 (2013.01);
Abstract
Laser-assisted integrated circuit (IC) device testing apparatus capable of inducing hot carrier injection (HCI) within selected transistors of an IC device. A laser source of sufficiently high output power (e.g., 1 W) and short pulse duration (e.g., 100 fs) can generate enough hot carriers through a multi-photon (e.g., TPA) carrier injection mechanism to significantly accelerate HCI aging even at low transistor voltage bias (e.g., <1.5V). Rapid laser-assisted HCI transistor aging can selectively degrade transistors of individual functional IC blocks within an IC device.