The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Nov. 15, 2022
Applicant:

Universite Gustave Eiffel, Champs sur Marne, FR;

Inventors:

Zoubir Khatir, Le Plessis Robinson, FR;

Richard Lallemand, Paris, FR;

Ali Ibrahim, Fontenay le Fleury, FR;

Assignee:

UNIVERSITE GUSTAVE EIFFEL, Champs sur Marne, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01);
U.S. Cl.
CPC ...
G01R 31/2642 (2013.01); G01R 31/2619 (2013.01);
Abstract

A method for measuring the state of health, of at least one semiconductor-based power electronics, comprising: a—determining, at an initial time t0, a first current value I(t0)=I,ZCP0 when the voltage V is equal to a voltage V(t0)=V,ZCP0, the power electronics component then being in an 'initial time' state; b—measuring a value of the current I at each subsequent time ti for which the user wishes to ascertain the quantitative indicator D(ti), when the voltage V at the time ti is equal to the voltage V,ZCP0, the power electronics component then being in a “time ti” state; c—the processor computing a quantitative indicator D(ti) of the degradation of the power electronics component at each subsequent time ti, the value of which indicator depends on the variation in the value of the current I between the “initial time” state and the “time ti” state.


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