The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Dec. 29, 2022
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Hao-Wen Cheng, Pingtung County, TW;

Ming-Huei Yen, Taipei City, TW;

Wen-Jin Li, Taipei City, TW;

Yu-Ting Guan, Taichung City, TW;

Ding-Shiang Wang, Tainan City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); C09K 13/04 (2006.01); H10P 50/66 (2026.01);
U.S. Cl.
CPC ...
C03C 15/00 (2013.01); C09K 13/04 (2013.01); H10P 50/667 (2026.01);
Abstract

A method of performing a selective etch on an array substrate including the following is provided, and the array substrate includes a substrate and a component layer disposed on the substrate. Deionized water, hydrogen peroxide, and an acid are mixed to prepare a first solution, and the acid includes sulfuric acid, hydrochloric acid, oxalic acid or a combination thereof. An alkoxy silane compound is added to the first solution to prepare a second solution. The array substrate is placed into the second solution to remove the component layer, and an aging second solution is formed. The substrate is taken out from the aging second solution.


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