The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Feb. 18, 2022
Applicant:

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Takashi Matsumae, Tsukuba, JP;

Hideki Takagi, Tsukuba, JP;

Hitoshi Umezawa, Kawanishi, JP;

Yuuichi Kurashima, Tsukuba, JP;

Eiji Higurashi, Sendai, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 18/00 (2006.01); H01L 23/373 (2006.01); H10W 40/25 (2026.01);
U.S. Cl.
CPC ...
B32B 18/00 (2013.01); H10W 40/253 (2026.01);
Abstract

There is provided a silicon carbide composite body that can be expected to have efficient heat conduction and electrical conduction between bonding base materials. The silicon carbide composite body includes a first base material including silicon carbide having a silicon oxide layer SiOformed on the surface and a second base material which has an oxide layer MOwith an element M, which is one or more of metals that forms an oxide in the atmosphere (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, and C in diamond on the surface, and is bonded to the first base material such that the MOside faces the SiOside, and when at least some of C in silicon carbide forms C—O-M bonds and/or at least some of Si in the silicon carbide forms Si—O-M bonds, the second base material is bonded to the first base material.


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