The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
May. 24, 2022
Micron Technology, Inc., Boise, ID (US);
Hao Chen, Boise, ID (US);
Raja Kumar Varma Manthena, Boise, ID (US);
Surendranath C. Eruvuru, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory device can include a semiconductor substrate having a plurality of active semiconductor devices. The memory device can include a plurality of metallization layers disposed over the semiconductor substrate, where each of the plurality of metallization layers is separated from adjacent metallization layers by an interlayer dielectric. The memory device also includes a dummy metal fill disposed in a metallization layer. The dummy metal fill can be connected to a discharge path for dissipating a charge build up in the dummy metal fill to minimize antenna effects. In some embodiments, the discharge path can include the semiconductor substrate, which can be an electrical drain. The antenna protected dummy metal fill ensures is configured such that any accumulated charge during the fabrication process is discharged to the electric drain.