The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Mar. 31, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Wen-Chiung Tu, New Taipei City, TW;
Dian-Hau Chen, Hsinchu, TW;
Chen-Chiu Huang, Taichung City, TW;
Hsiang-Ku Shen, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Semiconductor structures and methods are provided. An exemplary method includes forming a first conductive feature in a dielectric layer, forming a metal-insulator-metal (MIM) capacitor over the dielectric layer, forming a first passivation structure over the MIM capacitor, forming a first contact via opening extending through the first passivation structure and the MIM capacitor to expose the first conductive feature, depositing a conductive material to fill the first contact via opening, performing a first etching process to the conductive material to form a first metal feature, the first metal feature comprising a first portion filling the first contact via opening and a second portion over the first passivation structure, and performing a second etching process to trim the second portion of the first metal feature, after the second etching process, a shape of a cross-sectional view of the second portion of the first metal feature comprises a barrel shape.