The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Mar. 10, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Shigeru Sugioka, Higashihiroshima, JP;
Hidenori Yamaguchi, Higashihiroshima, JP;
Keizo Kawakita, Higashihiroshima, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/00 (2025.01); H10D 1/68 (2025.01); H10W 20/00 (2026.01); H10W 20/40 (2026.01); H10P 50/00 (2026.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
H10W 20/496 (2026.01); H10D 1/042 (2025.01); H10D 1/716 (2025.01); H10W 20/081 (2026.01); H10P 50/283 (2026.01); H10P 50/73 (2026.01);
Abstract
A semiconductor structure includes an opening formed in a surface of an insulating layer, and a lower metal layer on the surface of the insulating layer, and sidewalls and a bottom surface of the opening in the surface of the insulating layer. The sidewalls are tapered inwardly from the surface of the insulating layer to the bottom surface of the opening by a taper angle of between 10 degrees and 45 degrees.