The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Jul. 19, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ming-Feng Lee, Chiayi County, TW;
Wei-Ting Chen, Tainan City, TW;
Chen-Chung Lai, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for forming an interconnection structure includes depositing a dielectric layer over a first interconnect layer, wherein the first interconnect layer comprises a first metallization layer; forming a via opening in the dielectric layer, and forming a conductive via in the via opening. Forming the via opening includes: etching a recess in the dielectric layer above the first metallization layer; etching a first lateral recess in the dielectric layer at a sidewall of the recess; and after etching the first lateral recess, etching the recess downward to expose the first metallization layer.