The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
May. 10, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Eunhyea Ko, Suwon-si, KR;
Daihyun Kim, Suwon-si, KR;
Thanh Cuong Nguyen, Suwon-si, KR;
Soyoung Lee, Suwon-si, KR;
Jihyun Lee, Suwon-si, KR;
Hoon Han, Suwon-si, KR;
Byungkeun Hwang, Suwon-si, KR;
Hiroyuki Uchiuzou, Tokyo, JP;
Kiyoshi Murata, Tokyo, JP;
Tomoharu Yoshino, Tokyo, JP;
Younjoung Cho, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Adeka Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device is provided. The method includes providing a first layer having a first surface and a second layer having a second surface orthogonal to the first surface in a vertical direction, forming an inhibitor layer conformally on the first surface and the second surface, exposing the second surface by selectively removing the inhibitor layer on the second surface among the first surface and the second surface, the exposing of the second surface may include selectively removing an edge portion of the inhibitor layer on the first surface, the edge portion contacting the second surface, and forming an interest layer on the exposed second surface.