The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

May. 25, 2022
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Johanna Henrica Deijkers, Eindhoven, NL;

Adriaan Jacobus Martinus Mackus, Eindhoven, NL;

Ageeth Anke Bol, Nuenen, NL;

Wilhelmus M. M. Kessels, Tilburg, NL;

Hessel Sprey, Leuven, BE;

Jan Willem Maes, Wilrijk, BE;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H10P 14/40 (2026.01); H10W 20/00 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10P 14/418 (2026.01); C23C 16/305 (2013.01); C23C 16/45536 (2013.01); H10W 20/033 (2026.01); H10W 20/425 (2026.01);
Abstract

The current disclosure relates to deposition of a transition metal chalcogenide barrier layer. The method of depositing a transition metal chalcogenide barrier layer comprises providing a substrate having an opening into a reaction chamber, providing a transition metal precursor in the reaction chamber in vapor phase and providing an reactive chalcogen species in the reaction chamber. The method may be a plasma-enhanced atomic layer deposition method. The disclosure further relates to an interconnect comprising a transition metal chalcogenide barrier layer.


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