The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Aug. 17, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/819 (2025.01); G02B 27/01 (2006.01); H10H 20/01 (2025.01); H10H 20/852 (2025.01); H10H 20/857 (2025.01); H10P 95/90 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10H 20/819 (2025.01); H10H 20/01 (2025.01); H10H 20/852 (2025.01); H10H 20/857 (2025.01); H10P 95/906 (2026.01); H10W 90/00 (2026.01); G02B 27/0172 (2013.01); H10H 20/0364 (2025.01);
Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes: a substrate, having a first side and a second side opposite to the first side, wherein the substrate includes a plurality of trenches at the second side; a device layer, disposed on the first side of the substrate; an interconnect layer, disposed on the device layer; a luminous layer, disposed on the interconnect layer; and a capping layer, conformally disposed on the second side of the bended substrate. The semiconductor device is convexly curved.