The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Aug. 28, 2023
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Wen-Sheng Wang, Hsin-Chu, TW;
Yi-Hsuan Fan, New Taipei City, TW;
Yen-Ting Chen, Changhua County, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a first epitaxial layer over the substrate, a first photodiode and a second photodiode in the first epitaxial layer, and a trench isolation structure between the first photodiode and the second photodiode. The first photodiode includes a first doped region having a first conductivity type. The first photodiode includes a second doped region, overlying the first doped region, having a second conductivity type different than the first conductivity type. The first photodiode includes a third doped region, overlying the first doped region, having the second conductivity type. A first distance between a sidewall of the third doped region and an uppermost surface of the first epitaxial layer is between about a hundredth to about a fifth of a second distance between a sidewall of the trench isolation structure and the uppermost surface of the first epitaxial layer.