The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Nov. 27, 2024
Apple Inc., Cupertino, CA (US);
Kapil K. Kothari, Fremont, CA (US);
Abhimanyu Sharma, San Francisco, CA (US);
Praveen Raghavan, Los Gatos, CA (US);
Lama Mouayad, Milpitas, CA (US);
Naveen Sai Jangala Naga, Milpitas, CA (US);
Neeladri Sain, San Jose, CA (US);
Vivekanandan Venugopal, Saratoga, CA (US);
Ofir Elster, Raanana, IL;
Apple Inc., Cupertino, CA (US);
Abstract
Integrated circuit devices with power gated domains between functional circuit regions are described. The power gated domains include power switch cells that have active region logic (e.g., material type) that is continuous with the active region logic that is present in boundary cells adjacent the functional circuit regions. The power switch cell may be designed to provide sufficient power gating capability for components in the functional circuit regions while more efficiently utilizing space between the functional circuit regions. The efficient utilization of space may be useful for devices in which the functional circuit regions are regions with memory circuits and the power switch cell provides power gating for the memory circuits.