The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Sep. 01, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seungchan Yun, Waterford, NY (US);
Jaejik Baek, Watervliet, NY (US);
Kang-Ill Seo, Springfield, VA (US);
Samsung Electronics Co, Ltd., Suwon-si, KR;
Abstract
An integrated circuit device may comprise an upper transistor on a substrate. The upper transistor may comprise an upper channel region. The integrated circuit device may further comprise a lower transistor between the substrate and the upper transistor. The lower transistor may comprise a lower channel region, an intergate spacer comprising an insulating material and adjacent to a side surface of the lower channel region, and a gate layer. The intergate spacer may be between the side surface of the lower channel region and the gate layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile