The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Feb. 08, 2023
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
This disclosure provides a semiconductor device, a method of manufacturing the same, a 3D NAND memory, and a memory system. The semiconductor device includes a substrate having a first trench at a surface thereof, and a first insulating layer formed on the surface of the substrate and inside the first trench. The first insulating layer formed inside the first trench forms a second trench that is embedded in the first trench. The semiconductor device further includes a conducting layer formed on a surface of the first insulating layer away from the substrate and inside the second trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile