The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Dec. 27, 2022
The Institute of Optics and Electronics, the Chinese Academy of Sciences, Chengdu, CN;
Xiangang Luo, Chengdu, CN;
Yanqin Wang, Chengdu, CN;
Chengwei Zhao, Chengdu, CN;
Tiancheng Gong, Chengdu, CN;
Changtao Wang, Chengdu, CN;
Wenhao Zhang, Chengdu, CN;
Yiyun Zhang, Chengdu, CN;
Yan Tang, Chengdu, CN;
Abstract
A gap inspection system is configured to inspect global gap data between mask and substrate, comprising: support frame; mask frame comprising autofocus module for real-time monitoring gap data between mask and substrate; wafer stage module comprising wafer chuck for adjusting position and orientation of substrate; front-side surface topography inspection module, mounted on upper substrate of support frame for inspecting the substrate, to acquire primary surface topography parameters; folding surface topography inspection module, switchable between inspection position and retract position for inspecting mask, to acquire secondary surface topography parameters; and control system, configured to acquire position parameters of mask and substrate and calibration parameters of front-side surface topography inspection module and folding surface topography inspection module, and configured to calculate global gap data between mask and substrate in conjunction with position parameters, calibration parameters, primary surface topography parameters, and secondary surface topography parameters after measuring tilt angle between mask and substrate.