The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
May. 16, 2024
Applicant:
Carl Zeiss Smt Gmbh, Oberkochen, DE;
Inventors:
Assignee:
CARL ZEISS SMT GMBH, Oberkochen, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G02B 1/14 (2015.01);
U.S. Cl.
CPC ...
G03F 7/70958 (2013.01); G03F 7/70033 (2013.01); G03F 7/7015 (2013.01); G03F 7/702 (2013.01); G03F 7/70233 (2013.01); G03F 7/70316 (2013.01); G03F 7/70925 (2013.01); G03F 7/70933 (2013.01); G02B 1/14 (2015.01);
Abstract
A method of depositing a cover layer onto an optical element (M) for reflection of EUV radiation. In the method, a cover layer containing phosphorus (P) is deposited onto the optical element (M). The optical element (M) in the course of deposition of the cover layer () is disposed in an interior () of a housing () of an EUV lithography system, and, for the deposition of the cover layer, phosphorus (P) is released from at least one phosphorus source () disposed outside the interior () or within the interior (). Also disclosed are an EUV lithography system and an optical element (M) for reflecting EUV radiation.