The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Jul. 18, 2024
Applicant:

United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;

Inventors:

Ya Xuan Zhuang, Shamen City, CN;

Wei-Chun Chang, Taichung City, TW;

You-Di Jhang, New Taipei City, TW;

Chin-Chun Huang, Hsinchu County, TW;

Wen Yi Tan, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); G01R 3/00 (2006.01); H10P 74/00 (2026.01); H10P 74/20 (2026.01);
U.S. Cl.
CPC ...
G01R 31/2601 (2013.01); G01R 3/00 (2013.01); H10P 74/207 (2026.01); H10P 74/273 (2026.01);
Abstract

The invention provides a semiconductor test key structure, which comprises a substrate, a plurality of gate structures located on the substrate, a plurality of thin film resistor layers, wherein each thin film resistor layer is located above one of the gate structures, and the thin film resistor layers are located in a dielectric layer, a test key circuit layer is located on the dielectric layer, wherein the test key circuit layer is a square wave pattern from a top view, and two contact pads are respectively connected with the test key circuit layer.


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