The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Jul. 25, 2022
Applicant:

Denso Corporation, Kariya-city, JP;

Inventors:

Tomohito Iwashige, Kariya-city, JP;

Takeshi Endo, Kariya-city, JP;

Assignee:

DENSO CORPORATION, Kariya-city, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 95/00 (2026.01); H10W 72/00 (2026.01); H10W 72/30 (2026.01); H10W 90/00 (2026.01); H10W 99/00 (2026.01); B22F 3/10 (2006.01);
U.S. Cl.
CPC ...
H10W 95/00 (2026.01); H10W 72/071 (2026.01); H10W 72/30 (2026.01); H10W 72/352 (2026.01); H10W 90/701 (2026.01); H10W 99/00 (2026.01); B22F 3/10 (2013.01); H10W 72/0113 (2026.01); H10W 72/01325 (2026.01); H10W 72/01333 (2026.01); H10W 72/01336 (2026.01); H10W 72/01361 (2026.01); H10W 72/07331 (2026.01); H10W 72/07332 (2026.01); H10W 72/322 (2026.01); H10W 72/325 (2026.01); H10W 90/734 (2026.01);
Abstract

Joining a second supporting member to one surface of a semiconductor chip through an upper layer joining portion includes: forming, on the one surface, a pre-joining layer by pressure-sintering a first constituent member containing a sintering material on the one surface such that spaces between the plurality of protrusions are filled with the pre-joining layer and the pre-joining layer has a flat surface on a side of the pre-joining layer away from the semiconductor chip; arranging, on the flat surface, the second supporting member through a second constituent member containing a sintering material; and heating and pressurizing the second constituent member. Thereby, an upper layer joining portion is formed by the second constituent member and the pre-joining layer.


Find Patent Forward Citations

Iwashige, Tomohito. (2026). Semiconductor device and method for manufacturing the semiconductor device (U.S. Patent No. 12696825). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12696825

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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