The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Aug. 07, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Sheng-Kai Huang, Taichung, TW;
Wei-Der Sun, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Semiconductor structures having low resistance via contacts and methods of fabricating the same are provided. An example semiconductor structure includes a substrate, a dielectric layer disposed over the substrate, a resistor disposed in the dielectric layer, and a resistor via contact disposed in the dielectric layer the resistor. The resistor via contact further includes a first layer disposed on and in contact with the resistor, a second layer disposed on the first layer, and a third layer disposed on the second layer. The first layer has a first thickness and includes a first material having a first resistivity, the second layer has a second thickness and includes a second material, and the third layer has a third thickness and includes a third material having a second resistivity. The first thickness is more than the third thickness, and the first resistivity is less than the second resistivity.