The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Oct. 16, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Anthony D Veches, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 19/00 (2026.01); H10N 10/01 (2023.01); H10N 10/17 (2023.01); H10W 40/28 (2026.01); H10D 48/32 (2025.01); H10N 10/13 (2023.01); H10W 42/40 (2026.01);
U.S. Cl.
CPC ...
H10N 19/00 (2023.02); H10N 10/01 (2023.02); H10N 10/17 (2023.02); H10W 40/28 (2026.01); H10D 48/366 (2025.01); H10N 10/13 (2023.02); H10W 42/405 (2026.01);
Abstract

A memory device comprises multiple memory dice arranged vertically in a stack of memory dice and at least one thermoelectric die contacting the bulk silicon layer of at least one of the memory dice of the multiple memory dice. Each memory die of the multiple memory dice includes an active circuitry layer that includes memory cells of a memory array and a bulk silicon layer. The thermoelectric die is configured to one or both of reduce heat from the memory die when a current is applied to terminals of the thermoelectric die and generate a voltage at the terminals of the thermoelectric die when heat from the memory die is applied to the thermoelectric die.


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